PMV280ENEAR

PMV280ENEAR is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Typical applications include relay driver, high-speed line driver, low-side load switch, switching circuits.

• Logic level compatible, AEC-Q101 qualified
• ElectroStatic Discharge (ESD) protection > 2kV HBM (class H2)
• Drain-source breakdown voltage is 100V min at ID = 250µA; VGS = 0V; Tj = 25°C
• Gate-source threshold voltage is 1.7V typ at ID = 250µA; VDS=VGS; Tj = 25°C
• Drain leakage current is 1µA max at VDS = 100V; VGS = 0V; Tj = 25°C
• Drain-source on-state resistance is 285mohm typ at VGS = 10V; ID = 1.1A; Tj = 25°C
• Source-drain voltage is 0.8V typ at IS = 1A; VGS = 0V; Tj = 25°C
• Gate resistance is 1.8ohm typ at f = 1MHz
• Ambient temperature range from -55°C to +175°C