PMCPB5530X,115
Trans MOSFET N/P-CH 20V 4A T/R
- RoHS 10 Compliant
- Tariff Charges
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- Very fast switching
- Trench MOSFET technology
- Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
- Exposed drain pad for excellent thermal conduction
Technical Attributes
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| Description | Value | |
|---|---|---|
| Complementary | ||
| 4 | ||
| 4 | ||
| 34 | ||
| 70 | ||
| 20 | ||
| 20 | ||
| 6 | ||
| 150 °C | ||
| 1.17 | ||
| 1.17 | ||
| SOT-1118 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210075 |
| Schedule B: | 8541210080 |