PBSS5260PAP,115
Trans GP BJT PNP 60V 2A 6-Pin DFN T/R
- RoHS 10 Compliant
- Tariff Charges
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4260PANP. NPN/NPN complement: PBSS4260PAN.
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain hFE at high IC
- Reduced Printed-Circuit Board (PCB) requirements
- High efficiency due to less heat generation
- AEC-Q101 qualified
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 60 | ||
| 2 | ||
| 170 | ||
| 6 | ||
| 150 °C | ||
| 2 | ||
| AEC-Q101 | ||
| SOT-1118 | ||
| Surface Mount | ||
| Dual PNP | ||
| 100 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210075 |
| Schedule B: | 8541210080 |