PBSS4160QAZ
Bipolar (BJT) Single Transistor, NPN, 60 V, 1 A, 325 mW, DFN1010D, Surface Mount
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Manufacturer:Nexperia
Product Category:
Discretes, Bipolar Transistors, Single Bipolar Transistors
Avnet Manufacturer Part #: PBSS4160QAZ
Secondary Manufacturer Part#: PBSS4160QAZ
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RoHS 10 Compliant -
Tariff Charges
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5160QA.
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain hFE at high IC
- High energy efficiency due to less heat generation
- Reduced Printed-Circuit Board (PCB) area requirements
- Solderable side pads
- AEC-Q101 qualified
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 60 V | ||
| 1 A | ||
| 85 | ||
| 3 | ||
| 150 °C | ||
| 325 mW | ||
| AEC-Q101 | ||
| DFN1010D | ||
| Surface Mount | ||
| NPN | ||
| 180 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
Factory Lead Time: