PBSM5240PFH,115
PNP Transistor with N-Channel Trench MOSFET 6-Pin HUSON EP T/R
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Manufacturer:Nexperia
Product Category:
Discretes, Other Discretes
Avnet Manufacturer Part #: PBSM5240PFH,115
Secondary Manufacturer Part#: PBSM5240PFH,115
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RoHS 10 Compliant -
Tariff Charges
Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). The device is housed in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High energy efficiency due to less heat generation
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Technical Attributes
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ECCN / UNSPSC / COO
| Description | Value |
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| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
Factory Lead Time: