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PBRP123YT,215

Trans Digital BJT PNP 40V 600mA 3-Pin TO-236AB T/R

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PBRP123YT,215
  • PBRP123YT,215
Manufacturer:Nexperia
Product Category: Discretes, Bipolar Transistors, Digital Transistors
Avnet Manufacturer Part #: PBRP123YT,215
Secondary Manufacturer Part#: PBRP123YT,215
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN123YT.

  • 800 mA repetitive peak output current
  • Low collector-emitter saturation voltage VCEsat
  • High current gain hFE
  • Reduces component count
  • Built-in bias resistors
  • Reduces pick and place costs
  • Simplifies circuit design
  • +-10 pct resistor ratio tolerance
  • AEC-Q101 qualified

Technical Attributes

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ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: EAR99
HTSN: 8541210075
Schedule B: 8541210080
In Stock :  0
Additional inventory
Factory Lead Time: 372 Weeks
Price for: Each
Quantity:
Min:21000  Mult:3000  
USD $: