PBHV8560ZX
Bipolar (BJT) Single Transistor, NPN, 600 V, 500 mA, 650 mW, SOT-223, Surface Mount
- RoHS 10 Compliant
- Tariff Charges
NPN high-voltage low Vcesat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9560Z
- Low collector-emitter saturation voltage Vcesat
- High collector current capability
- High collector current gain hfe at high Ic
- AEC-Q101 qualified
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 600 | ||
| 70 | ||
| 4 | ||
| 150 °C | ||
| 1.4 | ||
| AEC-Q101 | ||
| SOT-223 | ||
| Surface Mount | ||
| NPN |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210075 |
| Schedule B: | 8541210080 |