PBHV8515QAZ
Bipolar (BJT) Single Transistor, NPN, 150 V, 500 mA, 325 mW, SOT-1215, Surface Mount
- RoHS 10 Compliant
- Tariff Charges
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBHV9515QA.
- High voltage
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- Low package height of 0.37 mm
- AEC-Q101 qualified
- Suitable for Automatic Optical Inspection (AOI) of solder joint
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 150 | ||
| 100 | ||
| 4 | ||
| 150 °C | ||
| 1 | ||
| AEC-Q101 | ||
| SOT-1215 | ||
| Surface Mount | ||
| NPN | ||
| 75 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210075 |
| Schedule B: | 8541210080 |