PBHV3160ZX
Bipolar (BJT) Single Transistor, PNP, 600 V, 100 mA, 650 mW, SOT-223, Surface Mount
- RoHS 10 Compliant
- Tariff Charges
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
- High voltage
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC
- High collector current gain hFE at high IC
- AEC-Q101 qualified
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 600 V | ||
| 100 mA | ||
| 70 | ||
| 4 | ||
| 150 °C | ||
| 650 mW | ||
| AEC-Q101 | ||
| SOT-223 | ||
| Surface Mount | ||
| PNP | ||
| 38 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210075 |
| Schedule B: | 8541210080 |