NGW50T65H3DFPQ
IGBT, 80 A, 1.72 V, 340 W, 650 V, TO-247, 3 Pins
Manufacturer:Nexperia
Product Category:
Discretes, IGBT, IGBT Single
Avnet Manufacturer Part #: NGW50T65H3DFPQ
Secondary Manufacturer Part#: NGW50T65H3DFPQ
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RoHS 10 Compliant -
Tariff Charges
NGW50T65H3DFPQ is a 650V, 50A trench field-stop IGBT with full rated silicon diode in a 3 pin TO-247 package. It is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65H3DFP is rated to 175°C with optimized IGBT turn-off losses. This hard-switching 650V, 50A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications.
- Low conduction and switching losses
- Stable and tight parameters for easy parallel operation
- Fully rated and fast reverse recovery diode
- HV-H3TRB qualified
Technical Attributes
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ECCN / UNSPSC / COO
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| Country of Origin: | UNKNOWN |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
Factory Lead Time: