GAN080-650EBEZ
Gallium Nitride (GaN) Transistor, 650 V, 29 A, 80 Milliohms, 6.2 nC, 8 Pins, DFN8080, Surface Mount
- RoHS 10 Compliant
- Tariff Charges
Technical Attributes
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ECCN / UNSPSC / COO
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Country of Origin: | UNKNOWN |
ECCN: | EAR99 |
HTSN: | 8541290095 |
Schedule B: | 8541290080 |