GAN063-650WSAQ
Gallium Nitride (GaN) Transistor, 650 V, 34.5 A, 60 Milliohms, 15 nC, TO-247, 3 Pins, Surface Mount
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Manufacturer:Nexperia
Product Category:
Discretes, FETs, Gallium Nitride FETs (GaN)
Avnet Manufacturer Part #: GAN063-650WSAQ
Secondary Manufacturer Part#: GAN063-650WSAQ
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RoHS 10 Compliant -
Tariff Charges
GAN063-650WSAQ is a 650V, 50mohm Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies - offering superior reliability and performance. The applic
- Ultra-low reverse recovery charge, simple gate drive (0 to +10/12V), robust gate oxide (±20V)
- High gate threshold voltage (+4V) for very good gate bounce immunity
- Very low source-drain voltage in reverse conduction mode, transient
Technical Attributes
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| Description | Value |
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ECCN / UNSPSC / COO
| Description | Value |
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| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
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