GAN041-650WSBQ
Gallium Nitride (GaN) Transistor, 650 V, 47.2 A, 41 Milliohms, 22 nC, TO-247, 3 Pins, Surface Mount
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![GAN041-650WSBQ]()
Manufacturer:Nexperia
Product Category:
Discretes, FETs, Gallium Nitride FETs (GaN)
Avnet Manufacturer Part #: GAN041-650WSBQ
Secondary Manufacturer Part#: GAN041-650WSBQ
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RoHS 10 Compliant -
Tariff Charges
GAN041-650WSBQ is a 650V, 35mohm Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and
- Ultra-low reverse recovery charge, simple gate drive (0V to +10V or 12V), robust gate oxide (±20V)
- High gate threshold voltage (+4V) for very good gate bounce immunity
- Very low source-drain voltage in reverse conduction mode, trans
Technical Attributes
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| Description | Value | |
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| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
Factory Lead Time: