BSP52-QX

BSP52-QX is a NPN darlington transistor in a SOT-223 surface mounted device (SMD) plastic package. It is qualified according to AEC-Q101 and recommended for use in automotive applications. Device has 1.3V collector-emitter saturation voltage (IC = 500mA, IB = 0.5mA, Tj = 150 °C), 1.9V base-emitter saturation voltage (IC = 500mA, IB = 0.5mA). Suitable for use in industrial high gain amplification.

• 90V minimum collector-base breakdown voltage at IC = 100µA, IE = 0A
• Integrated diode and resistor, PNP complement: BSP62
• 80V minimum collector-emitter breakdown voltage at IC = 2mA, VBE = 0V
• 200MHz typical transition frequency (VCE = 5V, IC = 500mA, f = 100MHz)
• 1000 minimum DC current gain at VCE = 10V, IC = 150mA
• 5V minimum emitter-base breakdown voltage (IC = 0A, IE = 100µA)
• 500ns typical turn-on time and 1300ns typical turn-off time at IC=500mA, IBon=0.5mA, IBoff=-0.5mA
• 50nA collector-emitter cut-off current (VCE = 80V, VBE = 0V)
• 1A collector current, 2A peak collector current
• 50nA emitter-base cut-off current (VEB = 4V, IC = 0A), -65°C to 150°C ambient temperature range