BSH105,215
Power MOSFET, N Channel, 20 V, 1.05 A, 200 mOhm, SOT-23, 3 Pins, Surface Mount
- RoHS 10 Compliant
- Tariff Charges
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
- Saves PCB space due to small footprint
- Suitable for high frequency applications due to fast switching characteristics
- Suitable for logic level gate drive sources
- Suitable for very low gate drive sources voltage
Technical Attributes
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| Description | Value | |
|---|---|---|
| N Channel | ||
| 1.05 | ||
| 200 | ||
| 20 | ||
| 570 | ||
| 3 | ||
| 150 °C | ||
| 417 | ||
| SOT-23 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210075 |
| Schedule B: | 8541210080 |