MTA18ASF2G72PZ-3G2R1

MTA18ASF2G72PZ-3G2R1 is a DDR4 SDRAM. It is a high-speed DDR4 SDRAM module uses DDR4 SDRAM device with two or four internal memory bank groups. DDR4 SDRAM module utilizing 4- and 8-bit-wide DDR4 SDRAM device has four internal bank groups consisting of four memory banks each, providing a total of 16 banks. 16-bit-wide DDR4 SDRAM devices have two internal bank groups consisting of four memory banks each, providing a total of eight banks. DDR4 SDRAM module benefit from the DDR4 SDRAM's use of an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single READ or WRITE operation for the DDR4 SDRAM effectively consists of a single 8n-bit-wide, four-clock data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins.

• 16GB (2 Gig x 72), VDD = 1.20V (nominal), VPP = 2.5V (nominal), VDDSPD = 2.5V (nominal)
• 288-pin DIMM package, registered dual in-line memory module (RDIMM), gold edge contacts
• Supports ECC error detection and correction, low-power auto self refresh (LPASR)
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• On-die VREFDQ generation and calibration, single-rank, 16 internal banks; 4 groups of 4 banks each
• On-board I²C temperature sensor with integrated serial presence-detect (SPD) EEPROM
• Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
• Fly-by topology, terminated control, command, and address bus
• 16GB module density, 2 Gig x 72 configuration, 25.6GB/s bandwidth
• 0.625ns/3200MT/s memory clock/data rate, 0°C=TOPER=95°C commercial operating temperature