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MT53E2G32D4DE-046 AIT:C

DRAM, AEC-Q100, Mobile LPDDR4, 64 Gbit, 2G x 32bit, 2.133 GHz, TFBGA, 200 Pins

Manufacturer:Micron
Product Category: Memory, DRAMs
Avnet Manufacturer Part #: MT53E2G32D4DE-046 AIT:C
Secondary Manufacturer Part#: MT53E2G32D4DE-046 AIT:C
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

MT53E2G32D4DE-046 AIT:C is a automotive LPDDR4/LPDDR4X SDRAM. The 16Gb low-power DDR4 SDRAM (LPDDR4) or low VDDQ (LPDDR4X) is a high-speed, CMOS dynamic random-access memory device. This 8-bank device is internally configured with ×16 I/O. Each of the ×16 2,147,483,648-bit banks is organized as 131,072 rows by 1024 columns by 16 bits.

  • 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
  • Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
  • Programmable READ and WRITE latencies (RL/WL), programmable and on-the-fly burst lengths (BL=16,32)
  • Directed per-bank refresh for concurrent bank operation and ease of command scheduling
  • Up to 8.5GB/s per die, on-chip temperature sensor to control self refresh rate
  • Partial-array self refresh (PASR), selectable output drive strength (DS), clock-stop capability
  • Programmable VSS (ODT) termination, single-ended CK and DQS support
  • AEC-Q100 qualified, 8GB (64Gb) total density, 4266Mb/s data rate per pin
  • 200-ball TFBGA package
  • Operating temperature rating range from -40°C to +95°C

Technical Attributes

Find Similar Parts

Description Value
2.133 GHz
Mobile LPDDR4
TFBGA
Surface Mount
2G x 32bit
200
95 °C
-40 °C
1.1 V V

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: EAR99
HTSN: 8542320036
Schedule B: 8542320060
In Stock :  620.0
Ships in 1 bus. day
Additional inventory
Factory Lead Time: 372 Weeks
Price for: Each
Quantity:
Min:1360  Mult:1  
USD $:
1360+
$371.28
2720+
$356.4288
5440+
$332.2956
10880+
$324.87
21760+
$310.0188