MT53E2G32D4DE-046 AAT:C
DRAM, Mobile LPDDR4, 64 Gbit, 2G x 32bit, 2133 MHz, TFBGA, 200 Pins
MT53E2G32D4DE-046 AAT:C is a 64Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed, CMOS dynamic random-access memory device. This device is internally configured with 2 channels or 1 channel x 16 I/O, each channel having 8-banks.
- 2 Gig x 32 configuration, 4266Mb/s data rate pin
- LPDDR4, 4 die count
- Operating voltage range from 1.10V VDD2/0.60V or 1.10V VDDQ
- 16n prefetch DDR architecture
- 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry
- Bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies, programmable and on-the-fly burst lengths (BL = 16, 32)
- Automotive AEC-Q100 qualified
- Operating temperature range from -40°C to +105°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 2.133 MHz | ||
| Mobile LPDDR4 | ||
| TFBGA | ||
| Surface Mount | ||
| 2G x 32bit | ||
| 64 Gbit | ||
| 200 | ||
| 105 °C | ||
| -40 °C | ||
| 1.1 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542320036 |
| Schedule B: | 8542320060 |
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