MT53E1G32D2FW-046 WT:B

MT53E1G32D2FW-046 WT:B is a 32Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X). It is a high-speed, CMOS dynamic random-access memory device.

• 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
• Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
• Programmable READ and WRITE latencies (RL/WL), programmable and on-the-fly burst lengths (BL=16,32)
• Directed per-bank refresh for concurrent bank operation and ease of command scheduling
• Up to 8.5GB/s per die x16 channel, on-chip temperature sensor to control self refresh rate
• Partial-array self refresh (PASR), selectable output drive strength (DS), clock-stop capability
• Programmable VSS (ODT) termination, single-ended CK and DQS support
• 4GB (32Gb) total density, 4266Mb/s data rate per pin
• 200-ball TFBGA package
• Operating temperature rating range from -25°C to +85°C