MT53E1G32D2FW-046 AUT:B

MT53E1G32D2FW-046 AUT:B is a LPDDR4 SDRAM. It is a 16Gb high-speed, CMOS dynamic random-access memory device. This memory is internally configured with 2 channels or 1 channel ×16 I/O, each channel having 8-banks. It has on-chip temperature sensor to control self refresh rate and programmable READ and WRITE latencies (RL/WL). This memory has directed per-bank refresh for concurrent bank operation and ease of command scheduling. It has single-data-rate CMD/ADR entry with programmable VSS (ODT) termination.

• Operating voltage range is 1.10V (VDD2) / 0.60V or 1.10V (VDDQ)
• 1Gig x 32 configuration, LPDDR4, 2die addressing, clock-stop capability
• Packaging style is 200-ball TFBGA 10 x 14.5 x 1.1mm (Ø0.40 SMD)
• Cycle time is 046 = 468ps, ?CK RL = 36/40
• Operating temperature range is –40°C to +125°C, automotive certified, b design
• Clock rate is 2133MHz, data rate is 4266Mb/s, 16n prefetch DDR architecture
• Frequency range is 2133–10 MHz (data rate range per pin: 4266–20Mb/s)
• 8 internal banks per channel for concurrent operation
• Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
• Partial-array self refresh (PASR), selectable output drive strength (DS)