MT53E1G32D2FW-046 AAT:B

MT53E1G32D2FW-046 AAT:B is a x32 automotive mobile LPDDR4 SDRAM high-speed, CMOS dynamic random-access memory device.

• 1G x 32bit memory configuration, 4266Mb/s data rate/pin, 468ps tCK RL= 36/40 cycle time
• 1.10V VDD2 / 0.60V VDDQ or 1.10V VDDQ/1.80V VDD1 operating voltage
• AEC-Q100 automotive grade
• Frequency range from 2133 to 10MHz, 2133MHz clock rate, 16n prefetch DDR architecture
• 8 internal banks per channel for concurrent operation, single-data-rate CMD/ADR entry
• Bidirectional/differential data strobe per byte lane, programmable READ and WRITE latencies (RL/WL)
• On-chip temperature sensor to control self refresh rate
• On-chip temperature sensor to control self refresh rate, Selectable output drive strength (DS)
• Partial-array self refresh (PASR), programmable VSS (ODT) termination, single-ended CK, DQS support
• Operating temperature range from -40 to +105°C, 200-ball TFBGA 10 x 14.5 x 1.1mm (Ø0.40 SMD) package