MT53E1G32D2FW-046 WT:C

MT53E1G32D2FW-046 WT:C is a 32Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X). It is a high-speed, CMOS dynamic random-access memory device.

• Frequency range from 10MHz to 2133MHz (data rate range per pin: 20Mb/s-4266Mb/s")
• 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
• Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
• Programmable READ and WRITE latencies (RL/WL), selectable output drive strength (DS)
• Programmable and on-the-fly burst lengths (BL =16, 32), up to 8.5GB/s per die x16 channel
• Directed per-bank refresh for concurrent bank operation and ease of command scheduling
• On-chip temperature sensor to control self refresh rate, partial-array self refresh (PASR)
• Clock-stop capability, programmable VSS (ODT) termination, single-ended CK and DQS support
• 4GB (32Gb) total density, 4266Mb/s data rate per pin
• 200-ball TFBGA package, -25°C to +85°C operating temperature