MT48LC8M16LFB4-8 IT:G

The Micron 128Mb SDRAM device is a high-speed CMOS, dynamic random access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x16’s 33,554,432-bit banks is organized as 4,096 rows by 512 columns by 16 bits. Each of the x32’s 33,554,432-bit banks is organized as 4,096 rows by 256 columns by 32 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed (BA0, BA1 select the bank; A0–A11 select the row). The address bits registered coincident with the READ or WRITE command are used to select the starting column location for the burst access. The SDRAM provides for programmable read or write burst lengths (BL) of 1, 2, 4, or 8 locations, or the full page, with a burst terminate option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The 128Mb SDRAM device uses an internal pipelined architecture to achieve high-speed operation. This architecture is compatible with the 2n rule of prefetch architectures, but it also enables the column address to be changed on every clock cycle to achieve a highspeed, fully random access. Precharging one bank while accessing one of the other three banks will hide the precharge cycles and provide seamless high-speed, random-access operation. The 128Mb SDRAM device is designed to operate in 3.3V or 2.5V low-power memory systems. The 2.5V version is compatible with 1.8V I/O interface. An auto refresh mode is provided along with a power-saving, power-down mode. Al

• Temperature-compensated self refresh (TCSR)
• Fully synchronous; all signals registered on positive edge of system clock
• Internal pipelined operation; column address can be changed every clock cycle
• Internal banks for hiding row access/precharge
• Programmable burst lengths: 1, 2, 4, 8, or full page
• Auto precharge, includes concurrent auto precharge, and auto refresh modes
• Self refresh mode; standard and low power (not available on AT devices)
• Auto refresh
• 64ms, 4,096-cycle refresh (15.6µs/row) (commercial and industrial)
• 16ms, 4,096-cycle refresh (3.9µs/row) (automotive)
• LVTTL-compatible inputs and outputs
• Low voltage power supply
• Partial-array self refresh (PASR) power-saving mode