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MT47H128M16RT-25E AIT:C

DRAM, DDR2, 2 Gbit, 128M x 16bit, 400 MHz, 84 Pins, FBGA

Manufacturer:Micron
Product Category: Memory, DRAMs
Avnet Manufacturer Part #: MT47H128M16RT-25E AIT:C
Secondary Manufacturer Part#: MT47H128M16RT-25E AIT:C
  • Legend Information Icon RoHS 10 Compliant
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MT47H128M16RT-25E AIT:C is an DDR2 SDRAM. It uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially for 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. A single read or write access for the DDR2 SDRAM effectively consists of a single 4n-bit-wide, one-clock-cycle data transfer at the internal DRAM core and four corresponding n-bitwide, one-half-clock-cycle data transfers at the I/O balls.

  • Operating voltage range is 1.0V to 2.3V (VSS)
  • 128Meg x 16 configuration, AEC-Q100- qualified
  • Packaging style is 84-ball 9mm x 12.5mm FBGA
  • Timing (cycle time) is 2.5ns at CL = 5 (DDR2-800)
  • Posted CAS additive latency (AL)
  • Data rate is 800MT/s, differential data strobe (DQS, DQS#) option
  • DLL to align DQ and DQS transitions with CK, duplicate output strobe (RDQS) option for x8
  • Programmable CAS latency (CL)
  • On-die termination (ODT), supports JEDEC clock jitter specification
  • JEDEC-standard 1.8V I/O (SSTL_18-compatible), 8D response time

Technical Attributes

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Description Value
17 Bit
400 MHz
16 Bit
2 Gbit
DDR2 SDRAM
FBGA
Surface Mount
Tin-Silver-Copper
260
800 MHz
235 mA
0.4 ns
128M x 16bit
2 Gbit
Surface Mount
84
16 Bit
16 Bit
5 V
-40 to 85 °C
95 °C
-40 °C
84FBGA
84
12.5 x 9 x 1.2 mm
Industrial
FBGA
1.8 V
DDR2 SDRAM

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: EAR99
HTSN: 8542320024
Schedule B: 8542320060
In Stock :  0
Additional inventory
Factory Lead Time: 372 Weeks
Price for: Each
Quantity:
Min:1260  Mult:1260  
USD $: