MT40A1G16TD-062E AAT:F
DRAM, DDR4, 16 Gbit, 1G x 16bit, 1.6 GHz, FBGA, 96 Pins
MT40A1G16TD-062E AAT:F automotive DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as an eight-bank DRAM for the x16 configuration and as a 16-bank DRAM for the x8 configurations. The DDR4 SDRAM uses an 8n-prefetch architecture to achieve high-speed operation. The 8n-prefetch architecture is combined with an interface designed to transfer two data words per clock cycle at the I/O pins. A single READ or WRITE operation for the DDR4 SDRAM consists of a single 8n-bit wide, four-clock data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O pins.
- On-die, internal, adjustable VREFDQ generation, 1.2V pseudo open-drain I/O
- 8n-bit prefetch architecture, programmable data strobe preambles, output driver calibration
- Data strobe preamble training, command/address latency (CAL)
- Multipurpose register READ and WRITE capability, write levelling
- Self-refresh mode, low-power auto self-refresh (LPASR), temperature-controlled refresh (TCR)
- Fine granularity refresh, self refresh abort, maximum power saving
- Nominal, park, and dynamic on-die termination (ODT), 96-ball FBGA package
- Data bus inversion (DBI) for data bus, command/Address (CA) parity
- Databus write cyclic redundancy check (CRC), Per-DRAM addressability
- JEDEC JESD-79-4 compliant, sPPR and hPPR capability, AEC-Q100 qualified
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 1.6 GHz | ||
| DDR4 | ||
| FBGA | ||
| Surface Mount | ||
| 1G x 16bit | ||
| 96 | ||
| 105 °C | ||
| -40 °C | ||
| 1.2 V V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542320036 |
| Schedule B: | 8542320060 |