MT29F4G08ABBFAH4-IT:F

MT29F4G08ABBFAH4-IT:F is a NAND flash device that includes an asynchronous data interface for high-performance I/O operations. This device uses a highly multiplexed 8-bit bus (I/Ox) to transfer commands, addresses, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip-enabled signal. A target contains one or more NAND Flash die. A NAND flash die is the minimum unit that can independently execute commands and report status. A NAND flash die, in the ONFI specification, is referred to as a logical unit (LUN).

• 4Gb density, 8-bit device width, SLC level, 1 die, nCE, RnB, 1 number of channel
• Operating voltage range is 1.8V (1.7-1.95V), feature generation set F, asynchronous interface only
• Asynchronous speed grade mode, command set: ONFI NAND Flash protocol
• Internal ECC enabled by default (Parallel), production status, design Revision F
• Open NAND Flash Interface (ONFI) 1.0-compliant, single-level cell (SLC) technology
• Page size ×8: 4352 bytes (4096 + 256 bytes), block size: 64 pages, number of planes: 1
• Asynchronous I/O performance, tRC/tWC: 30ns (1.8V), erase block: 2ms (TYP)
• Read page: 115µs (MAX) with on-die ECC enabled, read page: 25µs (MAX) with on-die ECC disabled
• Program page:200µs (TYP) with on-die ECC disabled, program page:240µs (TYP) with on-die ECC enabled
• 63-ball VFBGA package, industrial operating temperature range from -40°C to +85°C