MT29F2G16ABAEAWP-AIT:E TR
SLC NAND Flash Parallel 3.3V 2Gbit 128M X 16bit 48-Pin TSOP T/R
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RoHS 10 Compliant -
Tariff Charges
NAND Flash technology provides a cost-effective solution for applications requiring high-density, solid-state storage. The MT29F2GxxAxD is a 2Gb NAND Flash memory device. Micron NAND Flash devices include standard NAND Flash features as well as new features designed to enhance system-level performance. Micron NAND Flash devices use a highly multiplexed 8-bit bus (I/O[7:0]) to transfer data, addresses, and instructions. The five command pins (CLE, ALE, CE#, RE#, WE#) implement the NAND Flash command bus interface protocol. Additional pins control hardware write protection (WP#), monitor the device ready/busy (R/B#) state, and enable block lock functionality (LOCK). This hardware interface creates a low-pin-count device with a standard pinout that is the same from one density to another, allowing future upgrades to higher densities without board redesign. The MT29F2G device contains 2,048 blocks. Each block is subdivided into 64 programmable pages. Each page consists of 2,112 bytes. The pages are further divided into a 2,048-byte data storage region with a separate 64-byte area. The 64-byte area is typically used for error management functions. The contents of each page can be programmed in tPROG (TYP), and an entire block can be erased in tBERS (TYP). On-chip control logic automates PROGRAM and ERASE operations to maximize cycle endurance. PROGRAM/ERASE endurance is specified at 100,000 cycles using appropriate error correction code (ECC) and error management.
- Open NAND Flash Interface (ONFI) 1.0-compliant
- Single-level cell (SLC) technology
- Organization
- Page size:
- x8: 2,112 bytes (2,048 + 64 bytes)
- x16: 1,056 words (1,024 + 32 words)
- Block size: 64 pages (128K + 4K bytes)
- Device size: 2Gb: 2,048 blocks
- READ performance
- Random READ: 25µs
- Sequential READ: 25ns (3.3V)
- Sequential READ: 35ns (1.8V)
- WRITE performance
- PROGRAM PAGE: 220µs (TYP, 3.3V)
- PROGRAM PAGE: 300µs (TYP, 1.8V)
- BLOCK ERASE: 500µs (TYP)
- Data retention: 10 years
- Endurance: 100,000 PROGRAM/ERASE cycles
- First block (block address 00h) guaranteed to be valid with ECC when shipped from factory1
- Industry-standard basic NAND Flash command set
- Advanced command set:
- PROGRAM PAGE CACHE MODE
- PAGE READ CACHE MODE
- One-time programmable (OTP) commands
- BLOCK LOCK (
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 23 ns | ||
| 29 Bit | ||
| Sectored | ||
| Symmetrical | ||
| No | ||
| SLC NAND | ||
| 2 Gbit | ||
| Yes | ||
| No | ||
| Parallel | ||
| Parallel | ||
| Matte Tin | ||
| 260 °C | ||
| 0.003/Block s | ||
| 35 mA | ||
| 0.6/Page ms | ||
| 2 Gbit | ||
| Surface Mount | ||
| 48 | ||
| 16 Bit | ||
| 128 MWords | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 48TSOP | ||
| 48 | ||
| 12 x 18.4 x 1.1 mm | ||
| 35 mA | ||
| 2.7 to 3.6 V | ||
| No | ||
| Automotive | ||
| No | ||
| TSOP | ||
| 3.6 V | ||
| 2.7 V | ||
| 3.3 V | ||
| 3.3000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991.B.1.A |
| HTSN: | 8542320051 |
| Schedule B: | 8542320060 |
Factory Lead Time: