MT29F2G08ABAGAH4-ITE:G

Micron NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI specification, is referred to as a logical unit (LUN). There is at least one NAND Flash die per chip enable signal. For further details, see Device and Array Organization. This device has an internal 4-bit ECC that can be enabled using the GET/SET features or by factory (always enabled).

• Open NAND Flash Interface (ONFI) 1.0-compliant
• Single-level cell (SLC) technology
• Organization
  • Page size x8: 2112 bytes (2048 + 64 bytes)
  • Page size x16: 1056 words (1024 + 32 words)
  • Block size: 64 pages (128K + 4K bytes)
  • Plane size: 2 planes x 1024 blocks per plane
  • Device size: 2Gb: 2048 blocks
• Asynchronous I/O performance
  • tRC/tWC: 20ns (3.3V), 25ns (1.8V)
• Array performance
  • Read page: 25µs 3
  • Program page: 200µs (TYP: 1.8V, 3.3V)3
  • Erase block: 700µs (TYP)
• Command set: ONFI NAND Flash Protocol
• Advanced command set
  • Program page cache mode4
  • Read page cache mode 4
  • One-time programmable (OTP) mode
  • Two-plane commands 4
  • Interleaved die (LUN) operations
  • Read unique ID
  • Block lock (1.8V only)
  • Internal data move
• Operation status byte provides software method