MT29F1G08ABAEAWP-AITX:E TR

The MT29F1G08 and MT29F1G16 are both 1Gb NAND Flash memory devices. NAND Flash technology provides a cost-effective solution for applications requiring high-density, solid-state storage. The MT29F1Gxx devices include standard NAND Flash features as well as new features designed to enhance system-level performance. The MT29F1Gxx devices use a multiplexed 8- or 16-bit bus (I/O[7:0] or I/O[15:0]) to transfer data, address, and instruction information. The five control signals (CLE, ALE, CE#, RE#, WE#) control the NAND Flash command bus interface protocol. Additional signals control hardware write protection (WP#), monitor the device ready/busy (R/B#) state, and enable BLOCK LOCK functions (LOCK). This hardware interface creates a low-ball-count device with a standard ball arrangement that is the same from one density to another, enabling future upgrades to higher densities without any board redesign. MT29F1Gxx devices contain 1,024 erasable blocks. Each block is subdivided into 64 programmable pages. Each page consists of 2,112 bytes (x8), or 1,056 words (x16). The pages are further divided into a 2,048-byte data storage region with a separate 64-byte area on the x8 device; and on the x16 device, separate 1,024-word and 32-word areas. The 64- byte and 32-word areas are typically used for error correction functions. On-chip control logic automates PROGRAM and ERASE operations to maximize cycle endurance. PROGRAM/ERASE endurance is specified at 100,000 cycles when using appropriate error correction code (ECC) and bad-block-management software.

• Organization
  • Page size x8: 2,112 bytes (2,048 + 64 bytes)
  • Page size x16: 1,056 words (1,024 + 32 words)
  • Block size: 64 pages (128K + 4K bytes)
  • Device size: 1Gb: 1,024 blocks
• READ performance
  • Random READ: 25µs (MAX)
  • Sequential READ: 50ns (MIN)
• WRITE performance
  • PROGRAM PAGE: 250µs (TYP)
  • BLOCK ERASE: 2.0ms (TYP)
• Endurance: 100,000 PROGRAM/ERASE cycles
• Data retention: 10 years
• The first block (block address 00h) is guaranteed to be valid without ECC (up to 1,000 PROGRAM/ ERASE cycles)
• VCC: 1.65–1.95V
• Automated PROGRAM and ERASE
• Basic NAND Flash command set
  • PAGE READ, RANDOM DATA READ, READ ID, READ STATUS, PROGRAM PAGE, RANDOM DATA INPUT, PROGRAM PAGE CACHE MODE, INTERNAL DATA MOVE, INTERNAL DATA MOVE with RANDOM DATA INPUT, BLOCK ERASE, RESET
• New commands
  • PAGE READ CACHE MODE
  • REA