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MT29F1G08ABAEAH4-AATX:E TR

SLC NAND Flash Parallel 3.3V 1Gb 128M 8Bit 0.6ms/Page 63-Pin VFBGA T/R

Manufacturer:Micron
Product Category: Memory, Flash Memory
Avnet Manufacturer Part #: MT29F1G08ABAEAH4-AATX:E TR
Secondary Manufacturer Part#: MT29F1G08ABAEAH4-AATX:E TR
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

Micron NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (DQx) to transfer commands,address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection (WP#) and monitor device status (R/B#).This Micron NAND Flash device additionally includes a synchronous data interface for high-performance I/O operations. When the synchronous interface is active, WE# becomes CLK and RE# becomes W/R#. Data transfers include a bidirectional data strobe (DQS).This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign.A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI specification, is referred to as a logical unit (LUN). For further details, see Device and Array Organization.

  • Open NAND Flash Interface (ONFI) 1.0-compliant1
  • Single-level cell (SLC) technology
  • Organization
    • Page size x8: 2112 bytes (2048 + 64 bytes)
    • Page size x16: 1056 words (1024 + 32 words)
    • Block size: 64 pages (128K + 4K bytes)
    • Plane size: 2 planes x 512 blocks per plane
    • Device size: 1Gb: 1024 blocks
  • Asynchronous I/O performance –tRC/tWC: 20ns (3.3V), 25ns (1.8V)
  • Array performance
    • Read page: 25µs
    • Program page: 200µs (TYP, 3.3V and 1.8V)
    • Erase block: 700µs (TYP)
  • Command set: ONFI NAND Flash Protocol
  • Advanced command set
    • Program page cache mode
    • Read page cache mode
    • One-time programmable (OTP) mode
    • Two-plane commands
    • Read unique ID
    • Internal data move
    • Block lock (1.8V only)
  • Operation status byte provides software method for detecting
    • Operation completion
    • Pass/fail

Technical Attributes

Find Similar Parts

Description Value
100 ns
Sectored
Symmetrical
No
SLC NAND
83 MHz
1 Gbit
Yes
No
Parallel
Parallel
Tin-Silver-Copper
0.003/Block s
35 mA
0.6/Page ms
1 Gbit
Surface Mount
63
8 Bit
128 MWords
-40 to 105 °C
105 °C
-40 °C
63VFBGA
63
9 x 11 x 1 mm
35 mA
0
Automotive
No
VFBGA
3.6 V
2.7 V
3.3 V
3.3000 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: EAR99
HTSN: 8542320051
Schedule B: 8542320060
In Stock :  0
Additional inventory
Factory Lead Time: 372 Weeks
Price for: Each
Quantity:
Min:1000  Mult:1000  
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