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MT28EW128ABA1LJS-0SIT TR

NOR Flash Parallel 3.3V 128Mbit 16M/8M X 8bit/16bit 70ns 56-Pin TSOP-I T/R

Manufacturer:Micron
Product Category: Memory, Flash Memory
Avnet Manufacturer Part #: MT28EW128ABA1LJS-0SIT TR
Secondary Manufacturer Part#: MT28EW128ABA1LJS-0SIT TR
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The device is an asynchronous, uniform block, parallel NOR Flash memory device. READ, ERASE, and PROGRAM operations are performed using a single low-voltage supply. Upon power-up, the device defaults to read array mode.The main memory array is divided into uniform blocks that can be erased independently so that valid data can be preserved while old data is purged. PROGRAM and ERASE commands are written to the command interface of the memory. An on-chip program/ erase controller simplifies the process of programming or erasing the memory by taking care of all special operations required to update the memory contents. The end of a PROGRAM or ERASE operation can be detected and any error condition can be identified. The command set required to control the device is consistent with JEDEC standards.CE#, OE#, and WE# control the bus operation of the device and enable a simple connection to most microprocessors, often without additional logic.The device supports asynchronous random read and page read from all blocks of the array. It also features an internal program buffer that improves throughput by programming 512 words via one command sequence. A 128-word extended memory block overlaps addresses with array block 0. Users can program this additional space and then protect it to permanently secure the contents. The device also features different levels of hardware and software protection to secure blocks from unwanted modification.

  • Single-level cell (SLC) process technology
  • Density: 128Mb
  • Supply voltage
    • VCC = 2.7–3.6V (program, erase, read)
    • VCCQ = 1.65 - VCC (I/O buffers)
  • Asynchronous random/page read
    • Page size: 16 words or 32 bytes
    • Page access: 20ns
    • Random access: 70ns (VCC = VCCQ = 2.7-3.6V)
    • Random access: 75ns (VCCQ = 1.65-VCC)
  • Buffer program (512-word program buffer)
    • 2.0 MB/s (TYP) when using full buffer program
    • 2.5 MB/s (TYP) when using accelerated buffer program (VHH)
  • Word/Byte program: 25us per word (TYP)
  • Block erase (128KB): 0.2s (TYP)
  • Memory organization
    • Uniform blocks: 128KB or 64KW each
    • x8/x16 data bus
  • Program/erase suspend and resume capability
    • Read from another block during a PROGRAM SUSPEND operation
    • Read or program another block during an ERASE SUSPEND operation
  • Unlock bypas

Technical Attributes

Find Similar Parts

Description Value
95 ns
24 Bit
Sectored
Symmetrical
Yes
NOR
128 MB
No
Yes
Parallel
Matte Tin
Bottom
260 °C
26/Chip s
31 mA
20 ns
0.2/Byte ms
70 ns
128 Mbit
Surface Mount
56
8, 16 Bit
16, 8 MWords
25 ns
-40 to 85 °C
85 °C
-40 °C
56TSOP-I
12 mA
56
14 x 18.4 x 1.05(Max) mm
35 mA
2.7 to 3.6 V
0
Industrial
No
TSOP-I
3.6 V
2.7 V
3 V
3.3000 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: EAR99
HTSN: 8542320051
Schedule B: 8542320060
In Stock :  0
Additional inventory
Factory Lead Time: 70 Weeks
Price for: Each
Quantity:
Min:1600  Mult:1600  
USD $:
1600+
$5.12857
3200+
$4.85135
6400+
$4.72368
9600+
$4.60256
12800+
$4.5105