EDB2432B4MA-1DIT-F-ES-D
DRAM Chip LPDDR2 SDRAM 2G-Bit 64M x 32 1.8V 134-Pin VF-BGA
- Ultra low-voltage core and I/O power supplies
- VDD2 = 1.14–1.30V
- VDDCA/VDDQ = 1.14–1.30V
- VDD1 = 1.70–1.95V
- Clock frequency range
- 533–10 MHz (data rate range: 1066–20 Mb/s/pin)
- Four-bit prefetch DDR architecture
- Eight internal banks for concurrent operation
- Multiplexed, double data rate, command/address inputs; commands entered on every CK edge
- Bidirectional/differential data strobe per byte of data (DQS/DQS#)
- Programmable READ and WRITE latencies (RL/WL)
- Programmable burst lengths: 4, 8, or 16
- Per-bank refresh for concurrent operation
- On-chip temperature sensor to control self refresh rate (SR not supported >105°C)
- Partial-array self refresh (PASR)
- Deep power-down mode (DPD)
- Selectable output drive strength (DS)
- Clock stop capability
- RoHS-compliant, “green” packaging
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 13 Bit | ||
| 533 MHz | ||
| 32 Bit | ||
| 2 Gbit | ||
| LPDDR2 SDRAM | ||
| 533 MHz | ||
| 6 mA | ||
| 1.876 ns | ||
| 2 Gbit | ||
| Surface Mount | ||
| 134 | ||
| 8 | ||
| 32 Bit | ||
| 32 Bit | ||
| 1.8000 V | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 64M x 32 | ||
| 134VF-BGA | ||
| Industrial | ||
| 1.8 V | ||
| LPDDR2 SDRAM |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542330001 |
| Schedule B: | 8542330000 |
Factory Lead Time: