TC4427MJA
MOSFET Driver, Low Side, 4.5V-18V supply, 1.5A and 7 ohm output, DIP-8
- RoHS 10 Compliant
- Tariff Charges
The TC4427M is a improved version of the earlier TC427M family of MOSFET drivers. The TC4427M devices have matched rise and fall timeswhen charging and discharging the gate ofa MOSFET. These devices are highly latch-up resistant under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking (of either polarity) occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against Electrostatic Discharge (ESD) up to 4 kV. The TC4427M MOSFET drivers can easily charge/discharge 1000 pF gate capacitances in under 30 ns and provide low enough impedances in both the on and off states to ensure the MOSFET's intended state will not be affected, even by large transients. The TC4427AM family ofdevices are also compatible drivers. The TC4427AM devices have matched leading and falling edge input-to-output delay times, in addition to the matched rise and fall times of the TC4427M devices.
- High Peak Output Current – 1.5A
- Wide Input Supply Voltage Operating Range: - 4.5V to 18V
- High Capacitive Load Drive Capability – 1000 pF in 25 ns (typ.)
- Short Delay Times – 40 ns (typ.)
- Matched Rise and Fall Times
- Low Supply Current: - With Logic ‘1’ Input – 4 mA - With Logic ‘0’ Input – 400 µA
- Low Output Impedance – 7O
- Latch-Up Protected: Will Withstand 0.5A Reverse Current
- Input: Will Withstand Negative Inputs Up to 5V
- ESD Protected – 4 kV
- Pin-Compatible with the TC427M and TC4427AM Devices
- Wide Operating Temperature Range: - -55°C to +125°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Non-Inverting | ||
| Low Side | ||
| 20 ns | ||
| CMOS|TTL | ||
| Tin-Lead | ||
| 30 ns | ||
| 50 ns | ||
| 30 ns | ||
| Through Hole | ||
| 2 | ||
| 8 | ||
| 2 | ||
| 2 | ||
| -55 to 125 °C | ||
| 125 °C | ||
| -55 °C | ||
| 40 ns | ||
| 7 Ohm | ||
| 8CDIP | ||
| 1.5 A | ||
| 8 | ||
| MOSFET | ||
| 9.78 x 6.73 x 3.8 mm | ||
| No | ||
| 1.5 A | ||
| 1.5 A | ||
| CDIP | ||
| 18 V | ||
| 4.5 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542330001 |
| Schedule B: | 8542330000 |