TC4405EPA
MOSFET DRVR 1.5A 2-OUT Lo Side Non-Inv 8-Pin PDIP Tube
- RoHS 10 Compliant
- Tariff Charges
The TC4405 is a CMOS buffer-drivers constructed with complementary MOS outputs, where the drains of the totem-pole output have been left separated so that individual connections can be made to the pull-up and pull-down sections of the output. This allows the insertion of drain-current-limiting resistors in the pull-up and/or pull-down sections, allowing the user to define the rates of rise and fall for a capacitive load; or a reduced output swing, if driving a resistive load, or to limit base current, when driving a bipolar transistor. Minimum rise and fall times, with no resistors, will be less than 30 nsec for a 1000 pF load. For driving MOSFETs in motor-control applications, where slow-ON/fast-OFF operation is desired, these devices are superior to the previously used technique of adding a diode-resistor combination between the driver output and the MOSFET, because they allow accurate control of turn-ON, while maintaining fast turnOFF and maximum noise immunity for an OFF device. When used to drive bipolar transistors, these drivers maintain the high speeds common to other Microchip drivers. They allow insertion of a base current-limiting resistor, while providing a separate half-output for fast turn-OFF. By proper positioning of the resistor, either npn or pnp transistors can be driven. For driving many loads in low-power regimes, these drivers, because they eliminate shoot-through currents in the output stage, require significantly less power at higher frequencies, and can be helpful in meeting low-power budgets.
- Independently Programmable Rise and Fall Times
- Low Output Impedance – 7O Typ.
- High Speed tR, tF – <30 nsec with 1000 pF Load
- Short Delay Times – <30 nsec
- Wide Operating Range: - 4.5V to 18V
- Latch-Up Protected: Will Withstand > 500 mA Reverse Current (Either Polarity)
- Input Withstands Negative Swings Up to -5V
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Non-Inverting | ||
| Low Side | ||
| 15 ns | ||
| CMOS|TTL | ||
| Matte Tin | ||
| 260 | ||
| 30 ns | ||
| 50 ns | ||
| 30 ns | ||
| Through Hole | ||
| 2 | ||
| 8 | ||
| 2 | ||
| 2 | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 32 ns | ||
| 7 Ohm | ||
| 8PDIP | ||
| 1.5 A | ||
| 8 | ||
| MOSFET | ||
| 10.16 x 6.6 x 4.06 mm | ||
| No | ||
| Industrial | ||
| 1.5 A | ||
| 1.5 A | ||
| PDIP | ||
| 18 V | ||
| 4.5 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542330001 |
| Schedule B: | 8542330000 |