SST39VF800A-70-4I-EKE

The SST39VF800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF800A write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories.

• Organized as 128K x16 / 256K x16 / 512K x16
• Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF200A/400A/800A – 2.7-3.6V for SST39VF200A/400A/800A
• Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention
• Low Power Consumption (typical values at 14 MHz) – Active Current: 9 mA (typical) – Standby Current: 3 µA (typical)
• Sector-Erase Capability – Uniform 2 KWord sectors
• Block-Erase Capability – Uniform 32 KWord blocks
• Fast Read Access Time – 55 ns for SST39LF200A/400A/800A – 70 ns for SST39VF200A/400A/800A
• Latched Address and Data
• Fast Erase and Word-Program – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Word-Program Time: 14 µs (typical) – Chip Rewrite Time: 2 seconds (typical) for SST39LF/VF200A 4 seconds (typical) for SST39LF/VF400A 8 seconds (typical) for SST39LF/VF800A
• Automatic Write Timin