SST39VF040-70-4C-NHE-T

The SST39VF040 is 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The devices write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF040 devices write with a 2.7-3.6V power supply. The devices conform to JEDEC standard pinouts for x8 memories.

• Organized as 128K x8 / 256K x8 / 512K x8
• Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF010/020/040 – 2.7-3.6V for SST39VF010/020/040
• Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention
• Low Power Consumption (typical values at 14 MHz) – Active Current: 5 mA (typical) – Standby Current: 1 µA (typical)
• Sector-Erase Capability – Uniform 4 KByte sectors
• Fast Read Access Time: – 45 ns for SST39LF010/020/040 – 55 ns for SST39LF020/040 – 70 ns for SST39VF010/020/040
• Latched Address and Data
• Fast Erase and Byte-Program: – Sector-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical) – Chip Rewrite Time: 2 seconds (typical) for SST39LF/VF010 4 seconds (typical) for SST39LF/VF020 8 seconds (typical) for SST39LF/VF040
• Automatic Write Timing – Internal VPP Generation
• End-of-Write D