SST38VF6402BT-70I/TV

The SST38VF6402B device is 4M x16 CMOS Advanced Multi-Purpose Flash Plus (Advanced MPF+) manufactured with Microchip proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST38VF6402B write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pin assignments for x16 memories. Featuring high performance Word-Program, the SST38VF6402B provide a typical Word-Program time of 7 µsec. For faster word-programming performance, the Write-Buffer Programming feature, has a typical word-program time of 1.75 µsec. These devices use Toggle Bit, Data# Polling, or the RY/ BY# pin to indicate Program operation completion. In addition to single-word Read, Advanced MPF+ devices provide a Page-Read feature that enables a faster word read time of 25 ns, eight words on the same page. To protect against inadvertent write, the SST38VF6402B have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are available with 100,000 cycles minimum endurance. Data retention is rated at greater than 100 years. The SST38VF6402B are suited for applications that require the convenient and economical updating of program, configuration, or data memory. For all system applications, Advanced MPF+ significantly improve performance and reliability, while lowering power consumption. These devices inherently use less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. For any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time; therefore, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices a

• Organized as 4M x16
• Single Voltage Read and Write Operations - 2.7-3.6V
• Superior Reliability - Endurance: 100,000 Cycles minimum - Greater than 100 years Data Retention
• Low Power Consumption (typical values at 5 MHz) - Active Current: 25 mA (typical) - Standby Current: 5 µA (typical) - Auto Low Power Mode: 5 µA (typical)
• 128-bit Unique ID
• Security-ID Feature - 248 Word, user One-Time-Programmable
• Protection and Security Features - Hardware Boot Block Protection/WP# Input Pin, Uniform (32 KWord), and Non-Uniform (8 KWord) options available - User-controlled individual block (32 KWord) protection, using software only methods - Password protection
• Hardware Reset Pin (RST#)
• Fast Read and Page Read Access Times: - 70 ns Read access time - 25 ns Page Read access times - 8-Word Page Read buffer
• Latched Address and Data
• Fast Erase Times: - Block-Erase Time: 18 ms (typical) - Chip-Erase Time: 40 ms (typica