SST26VF032BT-104I/SM
Flash Memory, Serial NOR, 32 Mbit, 4M x 8bit, SQI, 8 Pins, SOIJ
- RoHS 10 Compliant
- Tariff Charges
The Serial Quad I/O (SQI) family of Flash memory devices features a six-wire, 4-bit I/O interface that allows for low-power, high-performance operation in a low pin-count package. SST26VF032B also support full command-set compatibility to traditional Serial Peripheral Interface (SPI) protocol. System designs using SQI Flash devices occupy less board space and ultimately lower system costs.
SST26VF032B significantly improve performance and reliability, while lowering power consumption. These devices write (Program or Erase) with a single power supply of 2.3-3.6V. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative Flash memory technologies.
- Single Voltage Read and Write Operations: 2.7V-3.6V or 2.3V-3.6V
- Serial Interface Architecture: Nibble-wide multiplexed I/O’s with SPI-like serial command structure - Mode 0 and Mode 3; x1/x2/x4 Serial Peripheral Interface (SPI) Protocol
- High-Speed Clock Frequency:2.7V-3.6V: 104 MHz maximum; 2.3V-3.6V: 80 MHz maximum
- Burst Modes: Continuous linear burst; 8/16/32/64 Byte linear burst with wrap-around
- Superior Reliability: Endurance: 100,000 Cycles (minimum); Greater than 100 years Data Retention
- Low-Power Consumption: Active Read current: 15 mA (typical @ 104 MHz); Standby Current: 15 µA (typical)
- Fast Erase Time: Sector/Block Erase: 18 ms (typ), 25 ms (maximum); Chip Erase: 35 ms (typical), 50 ms (maximum)
- Page-Program: 256 bytes per page in x1 or x4 mode
- End-of-Write Detection: Software polling BUSY bit in STATUS register
- Flexible Erase Capability: Uniform 4-Kbyte sectors; Four 8-KByte top and bottom para
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 8 ns | ||
| Sectored | ||
| Symmetrical | ||
| Yes | ||
| 104 MHz | ||
| 32 Mbit | ||
| No | ||
| Yes | ||
| Serial | ||
| Dual SPI, QSPI, SPI | ||
| Matte Tin | ||
| Bottom|Top | ||
| 260 °C | ||
| 0.05/Chip s | ||
| 20 mA | ||
| 1.5/Page ms | ||
| 8 ns | ||
| 32 Mbit | ||
| Surface Mount | ||
| MSL 1 - Unlimited | ||
| 8 | ||
| 1 Bit | ||
| 32 MWords | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 8SOIJ | ||
| 8 | ||
| 5.26 x 5.25 x 1.98(Max) | ||
| 3.3V Serial NOR Flash Memories | ||
| 25 mA | ||
| 2.7 to 3.6 V | ||
| No | ||
| Industrial | ||
| No | ||
| SOIJ | ||
| 3.6 V | ||
| 2.7 V | ||
| 3.3 V | ||
| 3.0000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991.B.1.A |
| HTSN: | 8542320051 |
| Schedule B: | 8542320050 |