SST26VF016BT-104I/MF

The Serial Quad I/O (SQI) family of flash-memory devices features a six-wire, 4-bit I/O interface that allows for low-power, high-performance operation in a low pin-count package. SST26VF016B/016BA also support full command-set compatibility to traditional Serial Peripheral Interface (SPI) protocol. System designs using SQI flash devices occupy less board space and ultimately lower system costs. All members of the 26 Series, SQI family are manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thickoxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST26VF016B significantly improve performance and reliability, while lowering power consumption. These devices write (Program or Erase) with a single power supply of 2.7-3.6V. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. SST26VF016B are offered in 8-contact WDFN (6 mm x 5 mm), 8-lead SOIJ (208 mil), and 8-lead SOIC (150 mil). Two configurations are available upon order: SST26VF016B default at power-up has the WP# and Hold# pins enabled and SST26VF016BA default at power-up has the WP# and Hold# pins disabled.

• Single Voltage Read and Write Operations - 2.7-3.6V
• Serial Interface Architecture - Nibble-wide multiplexed I/O’s with SPI-like serial command structure - Mode 0 and Mode 3 - x1/x2/x4 Serial Peripheral Interface (SPI) Protocol
• High Speed Clock Frequency - 104 MHz max
• Burst Modes - Continuous linear burst - 8/16/32/64 Byte linear burst with wrap-around
• Superior Reliability - Endurance: 100,000 Cycles (min) - Greater than 100 years Data Retention
• Low Power Consumption: - Active Read current: 15 mA (typical @ 104 MHz) - Standby Current: 15 µA (typical)
• Fast Erase Time - Sector/Block Erase: 18 ms (typ), 25 ms (max) - Chip Erase: 35 ms (typ), 50 ms (max)
• Page-Program - 256 Bytes per page in x1 or x4 mode
• End-of-Write Detection - Software polling the BUSY bit in status register
• Flexible Erase Capability - Uniform 4 KByte sectors - Four 8 KByte top and bottom parameter overlay blocks - One 32 KByte top and bott