MCP14E6-E/P
MOSFET DRVR 2A 2-OUT Lo Side Inv 8-Pin PDIP Tube
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Manufacturer:Microchip
Product Category:
Power Management, Drivers & Controllers, Gate Drivers
Avnet Manufacturer Part #: MCP14E6-E/P
Secondary Manufacturer Part#: MCP14E6-E/P
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RoHS 10 Compliant -
Tariff Charges
The MCP14E6 device is high-speed MOSFET drivers, capable of providing 2.0A of peak current. The dual inverting, dual non-inverting and complementary outputs are directly controlled from either TTL or CMOS (3V to 18V). These devices also feature low shoot-through current, fast rise/fall times and propagation delays, which make them ideal for high switching frequency applications.
- High Peak Output Current: 2.0A (typical)
- Independent Enable Function for Each Driver Output
- Wide Input Supply Voltage Operating Range: - 4.5V to 18V
- Low Shoot-Through/Cross-Conduction Current in Output Stage
- High Capacitive Load Drive Capability: - tR: 12 ns with 1000 pF load (typical) - tF: 15 ns with 1000 pF load (typical)
- Short Delay Times: 45 ns (typical)
- Low Supply Current: - With Logic ‘1’ Input/Enable – 1 mA (typical) - With Logic ‘0’ Input/Enable – 300 µA (typical)
- Latch-up Protected: Passed JEDEC JESD78A
- Logic Input will Withstand Negative Swing, up to 5V
- Space-Saving Packages: - 8-Lead SOIC, PDIP, 6x5 DFN
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Inverting | ||
| Low Side | ||
| 45 ns | ||
| 3V to 18V|CMOS|TTL | ||
| Matte Tin | ||
| 260 | ||
| 35 ns | ||
| 65 ns | ||
| 30 ns | ||
| Through Hole | ||
| 2 | ||
| 8 | ||
| 2 | ||
| 2 | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 45 ns | ||
| 5, 5 Ohm | ||
| 8PDIP | ||
| 2 A | ||
| 8 | ||
| MOSFET | ||
| 9.27 x 6.35 x 3.3 mm | ||
| AEC-Q100 | ||
| No | ||
| Extended | ||
| 2 A | ||
| 2 A | ||
| PDIP | ||
| 18 V | ||
| 4.5 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542330001 |
| Schedule B: | 8542330000 |
Factory Lead Time: