MCP14E10-E/SN
MOSFET DRVR 3A 2-OUT Lo Side Non-Inv 8-Pin SOIC N Tube
- RoHS 10 Compliant
- Tariff Charges
The MCP14E10-E/SN is a high-speed power MOSFET Driver with an enable function. It is capable of providing 3A of peak current. The dual inverting and complementary outputs are directly controlled from either TTL or CMOS. This device also features low shoot
- Independent enable function for each driver output
- Low shoot-through/cross-conduction current in output stage
- High capacitive load drive capability
- Short delay times
- Low supply current
- Logic input will withs
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Non-Inverting | ||
| Low Side | ||
| 45 ns | ||
| 3V to 18V|CMOS|TTL | ||
| Matte Tin | ||
| 260 | ||
| 30 ns | ||
| 65 ns | ||
| 30 ns | ||
| Surface Mount | ||
| MSL 1 - Unlimited | ||
| 2 | ||
| 8 | ||
| 2 | ||
| 2 | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 45 ns | ||
| 4, 4 Ohm | ||
| 8SOIC N | ||
| 3 A | ||
| 8 | ||
| MOSFET | ||
| 4.9 x 3.9 x 1.25 mm | ||
| No | ||
| Extended | ||
| 3 A | ||
| 3 A | ||
| SOIC N | ||
| 18 V | ||
| 4.5 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542330001 |
| Schedule B: | 8542330000 |