93AA76T/SN
EEPROM Serial-3Wire 8K-bit 1K x 8/512 x 16 2.5V/3.3V/5V 8-Pin SOIC N T/R
The 93AA76 are 8K and 16K low voltage serial Electrically Erasable PROMs. The device memory is configured as x8 or x16 bits depending on the ORG pin setup. Advanced CMOS technology makes these devices ideal for low power non-volatile memory applications. These devices also have a Program Enable (PE) pin to allow the user to write-protect the entire contents of the memory array. The 93AA76 is available in standard 8-pin PDIP and 8-pin surface mount SOIC packages.
- Single supply operation down to 1.8V
- Low-power CMOS technology:
- 1 mA active current typical
- 5 µA standby current (typical) at 3.0V
- ORG pin selectable memory configuration:
- 1024 x 8 or 512 x 16-bit organization (93AA76)
- 2048 x 8 or 1024 x 16-bit organization (93AA86)
- Self-timed erase and write cycles
- Automatic ERAL before WRAL
- Power on/off data protection circuitry
- Industry standard 3-wire serial I/O
- Device status signal during erase/write cycles
- Sequential read function
- 1,000,000 erase/write cycles ensured
- Data retention > 200 years
- 8-pin PDIP/SOIC package
- Temperature ranges available:
- Commercial (C): 0°C to +70°C
- Tape and Reel Packaging
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Yes | ||
| SOIC | ||
| Surface Mount | ||
| Serial(3-Wire) | ||
| 3-Wire | ||
| Matte Tin | ||
| 260 | ||
| 3 mA | ||
| 1K x 8bit, 512 x 16bit | ||
| Surface Mount | ||
| 8 | ||
| 3 MHz | ||
| 0 to 70 °C | ||
| 85 °C | ||
| -25 °C | ||
| 1Kx8|512x16 | ||
| 8SOIC N | ||
| 8 | ||
| 4.9 x 3.9 x 1.25 mm | ||
| 8Kbit Microwire Serial EEPROM | ||
| 1.8 to 6 V | ||
| No | ||
| Commercial | ||
| SOIC N | ||
| 5.5 V | ||
| 1.8 V | ||
| 2.5, 3.3, 5 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542320051 |
| Schedule B: | 8542320040 |
Factory Lead Time: