11AA02E64-I/SN

The 11AA02E64 (11AA02EXX*) device is a 2 Kbit Serial Electrically Erasable PROM. The device is organized in blocks of x8-bit memory and support the patented** single I/O UNI/O® serial bus. By using Manchester encoding techniques, the clock and data are combined into a single, serial bit stream (SCIO), where the clock signal is extracted by the receiver to correctly decode the timing and value of each bit. Low-voltage design permits operation down to 1.8V, with standby and active currents of only 1 uA and 1 mA, respectively. The 11AA02EXX is available in standard 8-lead SOIC and 3-lead SOT-23 packages.

Pre-programmed Globally Unique, 48-bit or 64-bit Node Address Compatible with EUI-48™ and EUI-64™ Single I/O, UNI/O® Serial Interface Bus Low-Power CMOS Technology 1 mA active current, typical 1 µA standby current (max.) 256 x 8 Bit Organization Schmitt Trigger Inputs for Noise Suppression Output Slope Control to Eliminate Ground Bounce 100 kbps Max. Bit Rate Equivalent to 100 kHz Clock Frequency Self-Timed Write Cycle (including Auto-Erase) Page-Write Buffer for up to 16 Bytes STATUS Register for Added Control: Write enable latch bit Write-In-Progress bit Block Write Protection Protect none, 1/4, 1/2 or all of array Built in Write Protection Power-on/off data protection circuitry Write enable latch High Reliability Endurance: 1,000,000 erase/write cycles Data retention: > 200 years ESD protection: > 4,000V 3-lead SOT-23 and 8-lead SOIC Packages Pb-Free and RoHS Compliant Available Temperature Ranges: Industrial -40°C to 85°C