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MX29LV800CTTI-70G

Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 70ns 48-Pin TSOP-I

Manufacturer:Macronix
Product Category: Memory, Flash Memory
Avnet Manufacturer Part #: MX29LV800CTTI-70G
Secondary Manufacturer Part#: MX29LV800CTTI-70G
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The MX29LV800C T/B is a 8-mega bit Flash memory organized as 1M bytes of 8 bits or 512K words of 16 bits. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29LV800C T/B is packaged in 44-pin SOP, 48-pin TSOP, and 48-ball CSP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The standard MX29LV800C T/B offers access time as fast as 45ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX29LV800C T/B has separate chip enable (CE#) and output enable (OE#) controls. MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX29LV800C T/B uses a command register to manage this functionality. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility. MXIC Flash technology reliably stores memory contents even after 100,000 erase and program cycles. The MXIC cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produces reliable cycling. The MX29LV800C T/B uses a 2.7V~3.6V VCC supply to perform the High Reliability Erase and auto Program/Erase algorithms. The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamperes on address and data pin from -1V to VCC + 1V

  • Extended single - supply voltage range 2.7V to 3.6V
  • 1,048,576 x 8/524,288 x 16 switchable
  • Single power supply operation
    • 3.0V only operation for read, erase and program operation
  • Fast access time: 45R/55R/70/90ns
  • Low power consumption
    • 30mA maximum active current
    • 0.2uA typical standby current
  • Command register architecture
    • Byte/word Programming (9us/11us typical)
    • Sector Erase (Sector structure 16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)
  • Fully compatible with MX29LV800BT/BB device
  • Auto Erase (chip & sector) and Auto Program
    • Automatically erase any combination of sectors with Erase Suspend capability
    • Automatically program and verify data at specified address
  • Erase suspend/Erase Resume
    • Suspends sector erase operation to read data from, or program data to, any sector that is not being erased, then resumes the e

Technical Attributes

Find Similar Parts

Description Value
70 ns
20, 19 Bit
Sectored
Asymmetrical
Yes
NOR
8 Mbit
No
Yes
Parallel
Parallel
Matte Tin|Tin-Copper|Tin-Bismuth
Top
260
32/Chip s
30 mA
27000/Chip ms
70 ns
8 Mbit
Surface Mount
48
8, 16 Bit
1, 512 kWords
30 ns
-40 to 85 °C
85 °C
-40 °C
48TSOP-I
48
12 x 18.4 x 1 mm
30 mA
2.7 to 3.6 V
Industrial
No
TSOP-I
3, 3.3 V
3, 3.3 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: 3A991.B.1.B.1
HTSN: 8542320071
Schedule B: 8542320040
In Stock :  0
Additional inventory
Factory Lead Time: 140 Weeks
Price for: Each
Quantity:
Min:960  Mult:96  
USD $:
960+
$2.0
1920+
$1.9503
3840+
$1.9404
7680+
$1.9305
15360+
$1.9206