MX29LV040CTI-70G

The MX29LV040C is a 4-mega bit Flash memory organized as 512K bytes of 8 bits. MXIC's Flash memories offer the most cost-effective and reliable read/write nonvolatile random access memory. The MX29LV040C is packaged in 32-pin PLCC and TSOP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The standard MX29LV040C offers access time as fast as 55ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX29LV040C has separate chip enable (CE#) and output enable (OE#) controls. MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX29LV040C uses a command register to manage this functionality. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility. The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamperes on address and data pin from -1V to VCC + 1V.

• Extended single - supply voltage range 2.7V to 3.6V
• 524,288 x 8 only
• Single power supply operation
  • 3.0V only operation for read, erase and program operation
• Fully compatible with MX29LV040 device
• Fast access time: 55R/70/90ns
• Low power consumption
  • 30mA maximum active current
  • 0.2uA typical standby current
• Command register architecture
  • 8 equal sector of 64K-Byte each
  • Byte Programming (9us typical)
  • Sector Erase (Sector structure 64K-Byte x8)
• Auto Erase (chip & sector) and Auto Program
  • Automatically erase any combination of sectors with Erase Suspend capability
  • Automatically program and verify data at specified address
• Erase suspend/Erase Resume
  • Suspends sector erase operation to read data from, or program data to, any sector that is not being erased, then resumes the erase
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