IS66WVE2M16EBLL-70BLI
PSRAM Async 32M-Bit 2M x 16 70ns 48-Pin TFBGA
The IS66WVE2M16EBLL is a integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.
- Asynchronous and page mode interface
- Dual voltage rails for optional performance
- VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
- Page mode read access
- Interpage Read access : 60ns, 70ns
- Intrapage Read access : 25ns
- Low Power Consumption
- Asynchronous Operation < 30 mA
- Intrapage Read < 23mA
- Standby < 180 µA (max.)
- Deep power-down (DPD)
- ALL/CLL: < 3µA (Typ)
- BLL: < 10µA (Typ)
- Low Power Feature
- Temperature Controlled Refresh
- Partial Array Refresh
- Deep power-down (DPD) mode
- Operating temperature Range Industrial: -40°C~85°C, Automotive A1: -40°C~85°C
- Package: 48-ball TFBGA
Technical Attributes
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| Description | Value | |
|---|---|---|
| 21 Bit | ||
| 32 Mbit | ||
| Tin-Silver-Copper | ||
| 260 | ||
| 70 ns | ||
| 32 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 48 | ||
| 16 Bit | ||
| 1 | ||
| 2 MWords | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 48TFBGA | ||
| 48 | ||
| 6 x 8 x 0.9(Max) | ||
| Industrial | ||
| TFBGA | ||
| 3.6 V | ||
| 2.7 V | ||
| 3.3 V | ||
| Asynchronous | ||
| 3.3000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542320002 |
| Schedule B: | 8542320040 |
Factory Lead Time: