IS64WV6416DBLL-10CTLA3-TR

The IS64WV6416 are high-speed, 1,048,576-bit static RAMs organized as 65,536 words by 16 bits. It is fabricated using high performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dpation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE\ and OE\. The active LOW Write Enable (WE\) controls both writing and reading of the memory. A data byte allows Upper Byte (UB\) and Lower Byte (LB\) access. The IS64WV6416 are packaged in the JEDEC standard 44-pin TSOP Type II, 44-pin 400-mil SOJ and 48-pin Mini BGA (6mm x 8mm) .

• High Speed
  • High-speed access time: 8, 10, 12, 20 ns
  • Low Active Power: 135 mW (typical)
  • Low Standby Power: 12 µW (typical) CMOS standby
• Low power
  • High-speed access time: 25, 35 ns
  • Low Active Power: 55 mW (typical)
  • Low Standby Power: 12 µW (typical) CMOS standby
• Single power supply
  • Vdd 1.65V to 2.2V
  • Vdd 2.4V to 3.6V
• Fully static operation: no clocks or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Automotive temperature support
• Lead-free available