IS64WV51216BLL-10MLA3
SRAM Chip Async Single 2.5V/3.3V 8M-Bit 512K x 16 10ns 48-Pin Mini-BGA
The IS64WV51216BLL are high-speed, 8M-bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. The device is packaged in the JEDEC standard 44-pinTSOP Type II and 48-pin Mini BGA (9mm x 11mm).
- High-speed access times: 8, 10, 20 ns
- High-performance, low-power CMOS process
- Multiple center power and ground pins for greater noise immunity
- Easy memory expansion with CE and OE options
- CE power-down
- Fully static operation: no clock or refreshrequired
- TTL compatible inputs and outputs
- Single power supply
- Available in 48-ball miniBGA and 44-pin TSOP
- Industrial and Automotive Temperature Support
- Lead-free available
- Data control for upper and lower bytes
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 19 Bit | ||
| 8 Mbit | ||
| Tin-Silver-Copper | ||
| 260 | ||
| 140 mA | ||
| 10 ns | ||
| 8 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 48 | ||
| 16 Bit | ||
| 16 Bit | ||
| 1 | ||
| 512 kWords | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 48Mini-BGA | ||
| 48 | ||
| 11 x 9 x 0.6 mm | ||
| No | ||
| Automotive | ||
| Mini-BGA | ||
| 3.6 V | ||
| 2.4 V | ||
| 3.3, 3.3 V | ||
| Asynchronous | ||
| 2.5, 3.3 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991.B.2.A |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |
Factory Lead Time: