IS64WV25616EDBLL-10BLA3
SRAM Chip Async Single 2.5V/3.3V 4M-Bit 256K x 16 10ns 48-Pin Mini-BGA
The ISSI IS64WV25616EDBLL is a high-speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices. The IS64WV25616EDBLL is packaged in the JEDEC standard 44-pin TSOP-II and 48-pin Mini BGA (6mm x 8mm).
- High-speed access time: 8, 10 ns
- Low Active Power: 85 mW (typical)
- Low Standby Power: 7 mW (typical) CMOS standby
- Single power supply
- VDD 2.4V to 3.6V (10 ns)
- VDD 3.3V ± 10% (8 ns)
- Fully static operation: no clock or refresh required
- Three state outputs
- Data control for upper and lower bytes
- Industrial and Automotive temperature support
- Lead-free available
- Error Detection and Error Correction
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 18 Bit | ||
| 4 Mbit | ||
| Tin-Silver-Copper | ||
| 260 | ||
| 50 mA | ||
| 10 ns | ||
| 4 Mbit | ||
| Surface Mount | ||
| 48 | ||
| 16 Bit | ||
| 16 Bit | ||
| 1 | ||
| 256 kWords | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 48Mini-BGA | ||
| 48 | ||
| 8 x 6 x 0.9 mm | ||
| No | ||
| Automotive | ||
| Mini-BGA | ||
| 3.6 V | ||
| 2.4 V | ||
| 3.3, 3.3 V | ||
| Asynchronous | ||
| 2.5, 3.3 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991.B.2.A |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |
Factory Lead Time: