IS64WV10248EDBLL-10BLA3-TR
SRAM Chip Async Single 3.3V 8M-Bit 1M x 8 10ns 48-Pin Mini-BGA T/R
The IS64WV10248EDBLL are very high-speed, low power, 1M-word by 8-bit CMOS static RAM. The IS64WV10248EDBLL are fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dpation can be reduced down with CMOS input levels. The IS64WV10248EDBLL operate from a single power supply and all inputs are TTL-compatible. The IS64WV10248EDBLL are available in 48 ball mini BGA (6mm x 8mm) and 44-pin TSOP (Type II) packages.
- High-speed access times: 8, 10, 20 ns
- High-performance, low-power CMOS process
- Multiple center power and ground pins for greater noise immunity
- Easy memory expansion with CE and OE options
- CE power-down
- Fully static operation: no clocks or refresh required
- TTL compatible inputs and outputs
- Packages available:
- 48-ball miniBGA (6mm x 8mm)
- 44-pin TSOP (Type II)
- Automotive Temperature Support
- Lead-free available.
Technical Attributes
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| Description | Value | |
|---|---|---|
| 20 Bit | ||
| 8 Mbit | ||
| fBGA | ||
| Tin-Silver-Copper | ||
| 260 | ||
| 65 mA | ||
| 10 ns | ||
| 8 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 48 | ||
| 8 Bit | ||
| 8 Bit | ||
| 1 | ||
| 1 MWords | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 48Mini-BGA | ||
| 48 | ||
| 6 x 8 x 0.9 | ||
| No | ||
| Automotive | ||
| Mini-BGA | ||
| 3.3 V | ||
| Asynchronous | ||
| 3.3000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991.B.2.A |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |
Factory Lead Time: